GD25LQ80ESIGR
IC FLASH 8MBIT SPI/QUAD 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited GD25LQ series NOR Flash memory, part number GD25LQ80ESIGR, offers 8Mbit of non-volatile storage. This component features a Quad SPI interface with QPI support, enabling high-speed data transfer up to 133 MHz. Its architecture supports efficient 1M x 8 memory organization with a fast 6 ns access time. Designed for surface mounting, it is housed in an 8-SOP package (8-SOIC) and operates within a voltage range of 1.65V to 2V. The GD25LQ80ESIGR exhibits a word/page write cycle time of 60µs and 2.4ms respectively. This device is suitable for applications in consumer electronics, industrial control, and automotive systems requiring reliable, high-performance non-volatile memory. It is supplied in Tape & Reel packaging and operates from -40°C to 85°C.
Additional Information
Series: GD25LQRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25LQ80ESIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.209"", 5.30mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O, QPI |
| Access Time | 6 ns |
| Memory Organization | 1M x 8 |
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