GD25LQ80EEIGR
IC FLASH 8MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited GD25LQ Series 8-Mbit NOR Flash memory, part number GD25LQ80EEIGR. This non-volatile memory features Quad I/O and QPI interfaces, supporting clock frequencies up to 133 MHz with an access time of 6 ns. The memory organization is 1M x 8. Operating voltage is between 1.65V and 2V, with an ambient temperature range of -40°C to 85°C. Write cycle times are 60µs for word and 2.4ms for page operations. The component is supplied in an 8-USON (3x2) package, surface-mount, on tape and reel. This device is suitable for applications in consumer electronics, industrial automation, and automotive systems requiring high-speed data storage.
Additional Information
Series: GD25LQRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25LQ80EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O, QPI |
| Access Time | 6 ns |
| Memory Organization | 1M x 8 |
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