GD25LQ64EWIGR
IC FLASH 64MBIT SPI/QUAD 8WSONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25LQ64EWIGR is a 64Mbit NOR FLASH memory component designed for high-performance applications. This Non-Volatile memory utilizes a Quad I/O SPI interface, enabling data transfer rates of up to 133 MHz with an access time of 6 ns. The memory is organized as 8M x 8 bits and operates with a supply voltage range of 1.65V to 2V. Featuring a 60µs word write cycle time and a 2.4ms page write cycle time, this component is suitable for demanding applications in industrial, consumer electronics, and automotive sectors. The GD25LQ64EWIGR is supplied in an 8-WSON (5x6) package, surface-mounted and available on tape and reel. Its operating temperature range is -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25LQ64EWIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 64Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-WSON (5x6) |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 6 ns |
| Memory Organization | 8M x 8 |
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