GD25LQ40ETJGR
IC FLASH 4MBIT SPI/QUAD 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited presents the GD25LQ40ETJGR, a 4Mbit NOR FLASH memory device from the GD25LQ series. This component features a Quad I/O SPI interface operating at up to 133 MHz, offering a fast 6 ns access time. Designed for efficient data storage and retrieval, it supports a voltage range of 1.65V to 2V and operates within an industrial temperature range of -40°C to 105°C. The memory is organized as 512K x 8 bits and is housed in an 8-SOP package, suitable for surface mount applications. Typical applications include consumer electronics, industrial control systems, and IoT devices. Write cycle times are specified at 60µs for word and 2.4ms for page operations.
Additional Information
Series: GD25LQRoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25LQ40ETJGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Grade | - |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 6 ns |
| Memory Organization | 512K x 8 |
| Qualification | - |
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