GD25LQ40ET2GY
IC FLASH 4MBIT SPI/QUAD 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25LQ series NOR Flash memory, part number GD25LQ40ET2GY, offers 4Mbit of non-volatile storage. This component operates with a 133 MHz clock frequency and features a rapid 6 ns access time. The memory interface supports SPI Quad I/O, enabling efficient data transfer. Organized as 512K x 8, it utilizes SLC (Single-Level Cell) NOR Flash technology for reliable operation. Supplied in an 8-SOP (8-SOIC) surface-mount package with a 0.154" width, it is rated for an operating temperature range of -40°C to 105°C. The device requires a supply voltage of 1.65V to 2V. Write cycle times are 60µs for word and 2.4ms for page operations. This component is suitable for applications in consumer electronics, industrial automation, and communication systems.
Additional Information
Series: GD25LQRoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:%20Limited&mpn=GD25LQ40ET2GY&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tray |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 6 ns |
| Memory Organization | 512K x 8 |
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