GD25LQ40EEIGR
IC FLASH 4MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25LQ series NOR Flash memory, part number GD25LQ40EEIGR, offers 4Mbit of non-volatile storage. This component features a high-speed SPI Quad I/O interface operating at up to 133 MHz with an access time of 6 ns. The memory organization is 512K x 8, utilizing SLC NAND technology for reliable data retention. Designed for surface mount applications, it is housed in a compact 8-USON (3x2) package with an exposed pad. The operating voltage range is 1.65V to 2V, with a write cycle time of 60µs for a word and 2.4ms for a page. This Flash memory is suitable for a wide range of applications including consumer electronics, industrial control systems, and IoT devices.
Additional Information
Series: GD25LQRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25LQ40EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 6 ns |
| Memory Organization | 512K x 8 |
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