GD25LQ40EEEGR
IC FLASH 4MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited GD25LQ series NOR Flash memory, part number GD25LQ40EEEGR, offers 4Mbit of non-volatile storage. This component features a high-speed SPI Quad I/O interface, capable of operating at clock frequencies up to 133 MHz with an access time of 6 ns. The memory organization is 512K x 8. Designed for efficient data transfer, it supports a supply voltage range of 1.65V to 2V and operates across an industrial temperature range of -40°C to 125°C. The GD25LQ40EEEGR is housed in an 8-USON (3x2) package, suitable for surface mount applications. This NOR Flash memory is utilized in industries such as industrial automation, consumer electronics, and automotive systems requiring reliable and compact memory solutions. Write cycle times are specified as 100µs for word and 4ms for page operations.
Additional Information
Series: GD25LQRoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25LQ40EEEGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Grade | - |
| Write Cycle Time - Word, Page | 100µs, 4ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 6 ns |
| Memory Organization | 512K x 8 |
| Qualification | - |
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