GD25LQ20EEIGR
IC FLASH 2MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor (HK) Limited GD25LQ series NOR Flash memory, part number GD25LQ20EEIGR, offers 2Mbit of non-volatile storage. This component utilizes a Quad SPI interface operating at up to 133 MHz with an access time of 6 ns. Its memory organization is 256K x 8, and it is manufactured using SLC NOR Flash technology. The device operates within a voltage supply range of 1.65V to 2V and is suitable for applications requiring a compact footprint, with a 8-USON (3x2) package. Typical write cycle times are 60µs for word and 2.4ms for page operations. This component is designed for surface mount applications and operates across a temperature range of -40°C to 85°C. Industries such as industrial control, consumer electronics, and automotive often leverage components like the GD25LQ20EEIGR for their persistent storage needs.
Additional Information
Series: GD25LQRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25LQ20EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 6 ns |
| Memory Organization | 256K x 8 |
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