GD25LQ16EWIGY
IC FLASH 16MBIT SPI/QUAD 8WSONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor (HK) Limited GD25LQ16EWIGY is a 16Mbit NOR FLASH memory device from the GD25LQ series. This non-volatile memory features an SPI interface supporting Quad I/O and QPI modes, enabling high-speed data transfers up to 133 MHz with an access time of 6 ns. The memory organization is 2M x 8, and it operates with a supply voltage range of 1.65V to 2.1V. Designed for surface mounting, it comes in an 8-WSON (5x6) package with an exposed pad, suitable for applications requiring compact footprints. The operating temperature range is -40°C to 85°C. This component is utilized in various industrial applications, including IoT devices, consumer electronics, and automotive systems. Write cycle times are 60µs for word and 2.4ms for page operations.
Additional Information
Series: GD25LQRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:%20Limited&mpn=GD25LQ16EWIGY&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tray |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.1V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-WSON (5x6) |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O, QPI |
| Access Time | 6 ns |
| Memory Organization | 2M x 8 |
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