GD25LQ16EWIGR
IC FLASH 16MBIT SPI/QUAD 8WSONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor GD25LQ series NOR Flash memory, part number GD25LQ16EWIGR, offers 16Mbit of non-volatile storage. This high-performance component operates with a clock frequency of 133 MHz and features an access time of 6 ns. The memory interface supports SPI with Quad I/O and QPI capabilities, enabling efficient data transfer. Organized as 2M x 8, this 16Mbit device is based on SLC NOR Flash technology. It is designed for surface mounting within an 8-WSON (5x6) package, featuring an exposed pad for enhanced thermal performance. Operating within a voltage range of 1.65V to 2.1V, it functions across an industrial temperature range of -40°C to 85°C. Write cycle times are 60µs for word and 2.4ms for page operations. This component is well-suited for applications in automotive, industrial, and consumer electronics requiring reliable non-volatile storage.
Additional Information
Series: GD25LQRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25LQ16EWIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.1V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-WSON (5x6) |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O, QPI |
| Access Time | 6 ns |
| Memory Organization | 2M x 8 |
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