GD25LQ16EEAGR
IC FLASH 16MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited GD25LQ series NOR Flash memory device, part number GD25LQ16EEAGR. This non-volatile memory component offers 16Mbit of storage organized as 2M x 8. It features a high-speed SPI interface supporting Quad I/O and QPI modes, operating at a clock frequency of 133 MHz with an access time of 6 ns. The device operates within a supply voltage range of 1.65V to 2.1V and is specified for an extended operating temperature range of -40°C to 125°C. Write cycle times are rated at 100µs for word and 4ms for page operations. The GD25LQ16EEAGR is housed in an 8-USON (3x2) surface-mount package and is supplied on a tape and reel. This memory solution is suitable for applications in consumer electronics, industrial control, and communication systems.
Additional Information
Series: GD25LQRoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25LQ16EEAGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 1.65V ~ 2.1V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 100µs, 4ms |
| Memory Interface | SPI - Quad I/O, QPI |
| Access Time | 6 ns |
| Memory Organization | 2M x 8 |
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