GD25LQ10CEIGR
IC FLASH 1MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor (HK) Limited GD25LQ10CEIGR is a 1Mbit NOR Flash memory device featuring a Quad SPI interface. This non-volatile memory component operates at a clock frequency of 104 MHz and offers a memory organization of 128K x 8. Designed for surface mounting, it is available in an 8-USON (2x3) package with an exposed pad for enhanced thermal performance. The GD25LQ10CEIGR operates within a supply voltage range of 1.65V to 2.1V and has an operating temperature range of -40°C to 85°C. Its high-speed SPI interface, supporting Quad I/O, makes it suitable for applications requiring efficient data transfer. Key specifications include a word write cycle time of 50µs and a page write cycle time of 2.4ms. This device finds utility in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Cut Tape (CT)Download Free CAD Model:%20Limited&mpn=GD25LQ10CEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.1V |
| Technology | FLASH - NOR |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (2x3) |
| Write Cycle Time - Word, Page | 50µs, 2.4ms |
| Memory Interface | SPI - Quad I/O |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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