GD25LF16EE2GR
IC FLASH 16MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited GD25LF NOR Flash memory offers 16Mbit of storage with a high-speed SPI interface supporting Quad I/O, QPI, and DTR protocols. This component operates at a clock frequency of 166 MHz, providing a swift 5.5 ns access time. Designed for demanding applications, it features a low supply voltage range of 1.65V to 2V. The GD25LF16EE2GR is qualified to AEC-Q100, making it suitable for the automotive industry, as well as industrial and consumer electronics. Its 8-USON (3x2) package with an exposed pad ensures efficient heat dissipation in surface-mount designs. The memory organization is 2M x 8, and it utilizes SLC NAND technology for reliable non-volatile data storage. Write cycle times are 60µs for word and 2.4ms for page operations. The operating temperature range is -40°C to 105°C.
Additional Information
Series: GD25LFRoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25LF16EE2GR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 166 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Access Time | 5.5 ns |
| Memory Organization | 2M x 8 |
| Qualification | AEC-Q100 |
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