GD25LE80ESIGR
IC FLASH 8MBIT SPI/QUAD 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25LE NOR Flash memory, part number GD25LE80ESIGR, offers 8Mbit of non-volatile storage. This component utilizes an SPI interface with Quad I/O and QPI capabilities, enabling high-speed data transfer up to 133 MHz with a 6 ns access time. Designed for surface mount applications, it is housed in an 8-SOP package (8-SOIC) and operates within a voltage range of 1.65V to 2V. The GD25LE series is suitable for demanding applications across industrial, consumer electronics, and networking sectors. It features a write cycle time of 60µs for word and 2.4ms for page operations, with an operating temperature range of -40°C to 85°C. The memory organization is 1M x 8.
Additional Information
Series: GD25LERoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25LE80ESIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.209"", 5.30mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O, QPI |
| Access Time | 6 ns |
| Memory Organization | 1M x 8 |
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