GD25LE80EEIGR
IC FLASH 8MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25LE series offers an 8Mbit NOR FLASH memory component, the GD25LE80EEIGR. This non-volatile memory utilizes a Serial Peripheral Interface (SPI) with Quad I/O and Quad Peripheral Interface (QPI) capabilities, supporting clock frequencies up to 133 MHz. Featuring an access time of 6 ns and a write cycle time of 60µs (word) or 2.4ms (page), it is organized as 1M x 8 bits. The GD25LE80EEIGR operates from a supply voltage of 1.65V to 2V and is housed in an 8-USON (3x2) surface mount package, with an exposed pad. This component is suitable for applications requiring high performance and low power consumption, often found in consumer electronics, industrial control, and communication systems. Operating temperature ranges from -40°C to 85°C.
Additional Information
Series: GD25LERoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25LE80EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O, QPI |
| Access Time | 6 ns |
| Memory Organization | 1M x 8 |
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