GD25LE32EEIGR
IC FLASH 32MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor (HK) Limited GD25LE32EEIGR is a 32Mbit NOR FLASH memory device featuring a Quad SPI and QPI interface. This component operates at a clock frequency of 133 MHz with an access time of 6 ns. The memory is organized as 4M x 8 and utilizes SLC technology for non-volatile storage. It supports a wide supply voltage range of 1.65V to 2V and operates within an ambient temperature range of -40°C to 85°C. The device is housed in an 8-USON (3x2) package with an exposed pad, suitable for surface mounting. Write cycle times are 60µs for word and 2.4ms for page operations. This component finds application in industrial and consumer electronics.
Additional Information
Series: GD25LERoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25LE32EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 32Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O, QPI |
| Access Time | 6 ns |
| Memory Organization | 4M x 8 |
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