GD25LE32E3IGR
IC FLASH 32MBIT SPI/QUAD 10WLCSPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
The GigaDevice Semiconductor (HK) Limited GD25LE32E3IGR is a 32Mbit NOR Flash memory device featuring SPI and Quad I/O (QPI) interfaces. Operating at a clock frequency of 133 MHz with an access time of 6 ns, this non-volatile memory is organized as 4M x 8. Its 1.65V to 2V supply voltage range and -40°C to 85°C operating temperature make it suitable for demanding applications. The device utilizes SLC NAND technology and comes in a compact 10-WLCSP package, ideal for space-constrained designs. Write cycle times are 60µs for word and 2.4ms for page operations. This component is commonly found in consumer electronics, industrial control systems, and automotive applications. The GD25LE series offers high performance and reliability for data storage needs.
Additional Information
Series: GD25LERoHS Status: RoHS CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25LE32E3IGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-XFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Memory Size | 32Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 10-WLCSP |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O, QPI |
| Access Time | 6 ns |
| Memory Organization | 4M x 8 |
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