GD25LE128ESIGR
IC FLASH 128MBIT SPI/QUAD 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited GD25LE128ESIGR is a 128Mbit NOR Flash memory device featuring a SPI interface with Quad I/O and QPI capabilities. This non-volatile memory component operates at a clock frequency of 133 MHz with an access time of 6 ns. The device is organized as 16M x 8 and supports a wide operating voltage range of 1.65V to 2V. Its 8-SOIC package (8-SOP) with a 0.209" width is suitable for surface-mount applications. The GD25LE128ESIGR is designed for demanding applications within the consumer electronics, industrial, and automotive sectors. It offers a write cycle time of 60µs for word and 2.4ms for page operations. Operating temperature ranges from -40°C to 85°C (TA).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25LE128ESIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.209"", 5.30mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 128Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O, QPI |
| Access Time | 6 ns |
| Memory Organization | 16M x 8 |
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