GD25LD40EEIGR
IC FLASH 4MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25LD series NOR Flash memory, part number GD25LD40EEIGR, offers 4Mbit of non-volatile storage. This component features a high-speed SPI interface with Dual I/O capability, supporting clock frequencies up to 50 MHz and an access time of 12 ns. The memory is organized as 512K x 8 and utilizes SLC (Single-Level Cell) NOR Flash technology. Designed for surface mount applications, it comes in an 8-USON (3x2) package with an exposed pad. Operating within a voltage range of 1.65V to 2V, this device is suitable for demanding applications across various industries including industrial control, consumer electronics, and automotive systems. The GD25LD40EEIGR ensures efficient data storage and retrieval with a page write cycle time of 100µs and a word write cycle time of 6ms. It operates within an ambient temperature range of -40°C to 85°C and is supplied in Tape & Reel packaging.
Additional Information
Series: GD25LDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25LD40EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 50 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 100µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 12 ns |
| Memory Organization | 512K x 8 |
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