GD25LD20EK6IGR
IC FLASH 2MBIT SPI/DUAL 6USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited's GD25LD20EK6IGR is a 2Mbit NOR Flash memory device featuring a Serial Peripheral Interface (SPI) with Dual I/O capability. This component operates at a clock frequency of 50 MHz with an access time of 12 ns, supporting efficient data transfer. The memory is organized as 256K x 8 and utilizes SLC (Single-Level Cell) technology. The GD25LD series device is housed in a compact 6-USON (1.2x1.2) package, suitable for surface mount applications. It operates within a voltage range of 1.65V to 2V and functions across an industrial temperature range of -40°C to 85°C. Write cycle times for word and page operations are specified at 100µs and 6ms, respectively. This memory component is commonly utilized in industrial control systems, consumer electronics, and automotive applications requiring reliable non-volatile storage.
Additional Information
Series: GD25LDRoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25LD20EK6IGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-XFDFN |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 50 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 6-USON (1.2x1.2) |
| Grade | - |
| Write Cycle Time - Word, Page | 100µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 12 ns |
| Memory Organization | 256K x 8 |
| Qualification | - |
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