GD25LD10ETIGR
IC FLASH 1MBIT SPI/DUAL 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited's GD25LD10ETIGR is a 1Mbit NOR FLASH memory device, employing Single-Level Cell (SLC) technology. This component features a high-speed SPI interface with Dual I/O capability, supporting clock frequencies up to 50 MHz and an access time of 12 ns. The memory organization is 128K x 8, and it operates within a supply voltage range of 1.65V to 2V. Designed for surface mount applications, it is housed in an 8-SOP (0.154" width) package and operates across a temperature range of -40°C to 85°C. Write cycle times are specified at 150µs for word and 6ms for page operations. This device is suitable for applications in consumer electronics, industrial control, and automotive systems requiring reliable non-volatile storage.
Additional Information
Series: GD25LDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25LD10ETIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 50 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Grade | - |
| Write Cycle Time - Word, Page | 150µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 12 ns |
| Memory Organization | 128K x 8 |
| Qualification | - |
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