GD25LD10EKIGR
IC FLASH 1MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited's GD25LD10EKIGR is a 1Mbit non-volatile NOR FLASH memory device. This component features a SPI interface supporting Dual I/O operation with a maximum clock frequency of 50 MHz and an access time of 12 ns. The memory organization is 128K x 8. Operating within a supply voltage range of 1.65V to 2V, it is housed in an 8-USON (1.5x1.5) package and supports surface mount technology. The operating temperature range is -40°C to 85°C. Write cycle times are specified at 150µs for word and 6ms for page operations. This memory is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: GD25LDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25LD10EKIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 50 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (1.5x1.5) |
| Grade | - |
| Write Cycle Time - Word, Page | 150µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 12 ns |
| Memory Organization | 128K x 8 |
| Qualification | - |
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