GD25D40EEIGR
IC FLASH 4MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor (HK) Limited GD25D40EEIGR is a 4Mbit NOR FLASH memory component featuring SPI Dual I/O interface capabilities. This device operates at a clock frequency of 104 MHz with an access time of 6 ns, supporting efficient data retrieval. The memory organization is 512K x 8, and it utilizes SLC (Single-Level Cell) technology. Designed for surface mount applications, it is housed in an 8-USON (3x2) package. The operating voltage range is 2.7V to 3.6V, with a typical operating temperature range of -40°C to 85°C. Write cycle times are 50µs for word and 4ms for page operations. This component is suitable for various industrial applications, including consumer electronics, communication systems, and data storage solutions.
Additional Information
Series: GD25DRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25D40EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 50µs, 4ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 512K x 8 |
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