GD25D20ETIGR
IC FLASH 2MBIT SPI/DUAL 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor (HK) Limited GD25D20ETIGR is a 2Mbit NOR FLASH memory device featuring a Serial Peripheral Interface (SPI) with Dual I/O capability. This component operates at a clock frequency of 104 MHz, offering a rapid 6 ns access time. Its memory organization is 256K x 8, with a page write cycle time of 4ms and word write cycle time of 50µs. Designed for non-volatile storage, it supports a voltage supply range of 2.7V to 3.6V and operates within an industrial temperature range of -40°C to 85°C. The device is housed in an 8-SOP (SOIC) surface mount package, supplied on tape and reel. This memory solution is suitable for applications in consumer electronics, industrial automation, and communications infrastructure.
Additional Information
Series: GD25DRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25D20ETIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Write Cycle Time - Word, Page | 50µs, 4ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 256K x 8 |
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