GD25D10ETIGR
IC FLASH 1MBIT SPI/DUAL 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
The GigaDevice Semiconductor (HK) Limited GD25D10ETIGR is a 1Mbit NOR Flash memory device. This component, part of the GD25D series, features a SPI Dual I/O interface operating at a clock frequency of 104 MHz with an access time of 6 ns. The memory is organized as 128K x 8 and utilizes SLC (Single-Level Cell) technology. It is supplied in an 8-SOP package suitable for surface mounting and operates within a voltage range of 2.7V to 3.6V. The device supports a wide operating temperature range of -40°C to 85°C. Write cycle times for word and page operations are specified as 100µs and 4ms respectively. This non-volatile memory finds application in various industries including consumer electronics, industrial automation, and automotive systems. The component is provided on a Tape & Reel (TR) for efficient manufacturing processes.
Additional Information
Series: GD25DRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25D10ETIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Grade | - |
| Write Cycle Time - Word, Page | 100µs, 4ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 128K x 8 |
| Qualification | - |
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