GD25D10EKIGR
IC FLASH 1MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
The GigaDevice Semiconductor (HK) Limited GD25D10EKIGR is a 1Mbit NOR FLASH memory component organized as 128K x 8. This non-volatile memory utilizes a Serial Peripheral Interface (SPI) with Dual I/O for efficient data transfer, supporting a clock frequency of up to 104 MHz and an access time of 6 ns. The device operates within a voltage range of 2.7V to 3.6V and features a write cycle time of 100µs for word and 4ms for page operations. Housed in an 8-USON (1.5x1.5) package, it is designed for surface mount applications and operates across an industrial temperature range of -40°C to 85°C. This component is commonly found in applications within the consumer electronics, industrial control, and communication sectors. The memory technology employed is SLC NOR FLASH.
Additional Information
Series: GD25DRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25D10EKIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (1.5x1.5) |
| Grade | - |
| Write Cycle Time - Word, Page | 100µs, 4ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 128K x 8 |
| Qualification | - |
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