GD25D10EKEGR
IC FLASH 1MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor (HK) Limited GD25D10EKEGR is a 1Mbit NOR Flash memory component from the GD25D series. This non-volatile memory features a SPI Dual I/O interface, supporting clock frequencies up to 104 MHz with an access time of 6 ns. Its memory organization is 128K x 8. The device operates within a voltage range of 2.7V to 3.6V and has an operating temperature range of -40°C to 125°C. The component is housed in an 8-USON (1.5x1.5) package, suitable for surface mount applications. Write cycle times are 120µs for word and 4ms for page operations. This component finds application in industrial, automotive, and consumer electronics sectors where reliable non-volatile storage is critical. It is supplied in Tape & Reel packaging.
Additional Information
Series: GD25DRoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25D10EKEGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (1.5x1.5) |
| Grade | - |
| Write Cycle Time - Word, Page | 120µs, 4ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 128K x 8 |
| Qualification | - |
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