GD25D10EEIGR
IC FLASH 1MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited GD25D10EEIGR is a 1Mbit NOR Flash memory component organized as 128K x 8. This device supports SPI and Dual I/O interfaces, operating at a clock frequency of 104 MHz with an access time of 6 ns. The memory is non-volatile and utilizes SLC (Single-Level Cell) technology. It features a supply voltage range of 2.7V to 3.6V and operates within an ambient temperature range of -40°C to 85°C. The GD25D10EEIGR is housed in an 8-USON (3x2) package, suitable for surface mounting. Write cycle times are specified at 100µs for word and 4ms for page operations. This component is commonly found in industrial, consumer electronics, and communication systems.
Additional Information
Series: GD25DRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25D10EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Grade | - |
| Write Cycle Time - Word, Page | 100µs, 4ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 128K x 8 |
| Qualification | - |
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