GD25D10CEIGR
IC FLASH 1MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited presents the GD25D10CEIGR, a 1Mbit NOR Flash memory device. This component features a high-speed SPI interface supporting Dual I/O operation, achieving a clock frequency of up to 100 MHz. The memory organization is 128K x 8, providing 1Mbit of non-volatile storage. Designed for efficiency, it offers a write cycle time of 50µs for words and 4ms for pages. Operating within a voltage range of 2.7V to 3.6V, this device is suitable for applications requiring reliable data storage in demanding environments, with an operating temperature range of -40°C to 85°C. The GD25D10CEIGR is supplied in an 8-USON (2x3) package, utilizing surface mount technology for compact integration. This memory solution finds application in various industrial sectors including consumer electronics, automotive systems, and IoT devices where robust and fast non-volatile memory is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25D10CEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Clock Frequency | 100 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (2x3) |
| Write Cycle Time - Word, Page | 50µs, 4ms |
| Memory Interface | SPI - Dual I/O |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
GD25Q80CSIGR
IC FLASH 8MBIT SPI/QUAD I/O 8SOP
GD25LQ32EWJGR
IC FLASH 32MBIT SPI/QUAD 8WSON
GD25T512MEBARY
IC FLASH
