GD25D05EEIGR
IC FLASH 512KBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor (HK) Limited GD25D NOR Flash memory, part number GD25D05EEIGR, offers 512Kbit of non-volatile storage. This component utilizes a Serial Peripheral Interface (SPI) with Dual I/O for enhanced data throughput, achieving a clock frequency of 104 MHz and an access time of 6 ns. The memory is organized as 64K x 8 and employs SLC (Single-Level Cell) technology. It operates within a voltage range of 2.7V to 3.6V and features a write cycle time of 100µs for word and 4ms for page operations. Packaged in an 8-USON (3x2) with an exposed pad, this surface-mount device is rated for an operating temperature range of -40°C to 85°C. Applications for this memory include industrial control systems, consumer electronics, and automotive electronics.
Additional Information
Series: GD25DRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25D05EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 512Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Grade | - |
| Write Cycle Time - Word, Page | 100µs, 4ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 64K x 8 |
| Qualification | - |
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