GD25D05EEEGR
IC FLASH 512KBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited presents the GD25D05EEEGR, a 512Kbit NOR FLASH memory device. This component features a high-speed SPI interface with Dual I/O capability operating at up to 104 MHz, offering a rapid 6 ns access time. The memory organization is 64K x 8, utilizing SLC NAND technology for reliable non-volatile storage. Designed for surface mounting, it is housed in an 8-XFDFN exposed pad package, specifically the 8-USON (3x2) supplier device package. The operating temperature range is -40°C to 125°C, with a supply voltage requirement between 2.7V and 3.6V. Write cycle times are 120µs for word and 4ms for page operations. This device is suitable for applications in consumer electronics, industrial control systems, and automotive electronics.
Additional Information
Series: GD25DRoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25D05EEEGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 512Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Grade | - |
| Write Cycle Time - Word, Page | 120µs, 4ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 64K x 8 |
| Qualification | - |
Request a Quote
Clients Also Buy
GD25D05EEIGR
IC FLASH 512KBIT SPI/DUAL 8USON
GD25D05EKIGR
IC FLASH 512KBIT SPI/DUAL 8USON
GD25D05ETIGR
IC FLASH 512KBIT SPI/DUAL 8SOP