GD25B64ENIGR
IC FLASH 64MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25B64ENIGR is a 64Mbit NOR Flash memory device from the GD25B series. This non-volatile memory utilizes SLC technology and supports Quad SPI operation for high-speed data transfers up to 133 MHz. Featuring a rapid 7 ns access time, this component is organized as 8M x 8 and operates across a 2.7V to 3.6V supply range. The GD25B64ENIGR is housed in an 8-USON (3x4) package, suitable for surface mounting. Typical applications for this memory can be found in industrial and consumer electronics, benefiting from its robust performance and compact form factor. The device offers a word write cycle time of 70µs and a page write cycle time of 2.4ms. It is supplied in Tape & Reel (TR) packaging and operates within an industrial temperature range of -40°C to 85°C.
Additional Information
Series: GD25BRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25B64ENIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 64Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x4) |
| Write Cycle Time - Word, Page | 70µs, 2.4ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 7 ns |
| Memory Organization | 8M x 8 |
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