GD25B16EEIGR
IC FLASH 16MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited presents the GD25B16EEIGR, a 16Mbit NOR Flash memory component from the GD25B series. This non-volatile memory features a Quad SPI interface, enabling high-speed data transfer at a 133 MHz clock frequency with an access time of 7 ns. The memory is organized as 2M x 8 bits and utilizes SLC (Single-Level Cell) technology. Designed for surface mounting, it comes in an 8-USON (3x2) package, specifically a 8-XFDFN Exposed Pad, and is supplied on a Tape & Reel. Operating within a voltage range of 2.7V to 3.6V, this component is suitable for applications operating in industrial environments, with an operating temperature range of -40°C to 85°C. Write cycle times are rated at 70µs for word and 2ms for page operations.
Additional Information
Series: GD25BRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25B16EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 70µs, 2ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 7 ns |
| Memory Organization | 2M x 8 |
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