GD25B128ESIGR
IC FLASH 128MBIT SPI/QUAD 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited presents the GD25B128ESIGR, a 128Mbit NOR Flash memory component. This non-volatile memory device features a Quad SPI interface, enabling high-speed data transfer at a clock frequency of 133 MHz with an access time of 7 ns. The memory organization is 16M x 8, and it operates from a 2.7V to 3.6V supply. The GD25B128ESIGR utilizes SLC technology and is housed in an 8-SOP (8-SOIC) package suitable for surface mounting. Its operating temperature range is -40°C to 85°C. This component is well-suited for applications in industrial, consumer electronics, and automotive sectors. Write cycle times for word and page operations are 70µs and 2.4ms, respectively. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25B128ESIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.209"", 5.30mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 128Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Write Cycle Time - Word, Page | 70µs, 2.4ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 7 ns |
| Memory Organization | 16M x 8 |
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