GA35XCP12-247
IGBT 1200V SOT247Manufacturer: GeneSiC Semiconductor
Categories: Single IGBTs
Quality Control: Learn More
GeneSiC Semiconductor GA35XCP12-247 is a Planar Trench (PT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current of 35A, with a pulsed collector current (Icm) of 35A. The on-state voltage (Vce(on)) is 3V at 15V gate-emitter voltage and 35A collector current. The device exhibits a gate charge of 50 nC and a reverse recovery time (trr) of 36 ns, with switching energies of 2.66mJ (on) and 4.35mJ (off) under test conditions of 800V, 35A, 22 Ohms, and 15V. Operating across a temperature range of -40°C to 150°C (TJ), the GA35XCP12-247 utilizes a standard input type and is housed in a TO-247-3 package, also identified as TO-247AB, for through-hole mounting. This component is suitable for use in power conversion systems within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 36 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 35A |
| Supplier Device Package | TO-247AB |
| IGBT Type | PT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 2.66mJ (on), 4.35mJ (off) |
| Test Condition | 800V, 35A, 22Ohm, 15V |
| Gate Charge | 50 nC |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 35 A |
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