GA50JT17-247
TRANS SJT 1700V 100A TO247Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor GA50JT17-247 is a 1700V Silicon Carbide Junction Transistor (SJT) designed for high-power applications. This through-hole component features a continuous drain current capability of 100A at 25°C (Tc) and a maximum power dissipation of 583W (Tc). The device offers a low on-resistance of 25mOhm at 50A. Operating at junction temperatures up to 175°C, the GA50JT17-247 is housed in a TO-247-3 package. Its robust performance characteristics make it suitable for use in industrial power conversion, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A |
| FET Feature | - |
| Power Dissipation (Max) | 583W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1700 V |
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