GA50JT12-263
TRANSISTOR 1200V 100A TO263-7Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor GA50JT12-263, a high-performance Trench Super Junction MOSFET, offers a robust 1200V breakdown voltage and a continuous drain current capability of 100A. This TO-263-7 packaged device is engineered for demanding power conversion applications. Its advanced trench technology ensures exceptionally low on-resistance, contributing to superior efficiency and reduced thermal stress in high-power systems. The GA50JT12-263 is well-suited for use in industrial power supplies, electric vehicle charging, solar inverters, and motor control applications where reliability and performance are paramount. The package provides ample thermal dissipation for efficient operation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
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