GA50JT12-247
TRANS SJT 1200V 100A TO247ABManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor GA50JT12-247 is a Silicon Carbide Junction Transistor designed for high-power applications. This device features a drain-to-source voltage (Vdss) rating of 1200 V and a continuous drain current (Id) of 100 A at 25°C (Tc). The maximum power dissipation is 583 W (Tc). With a low on-resistance (Rds On) of 25 mOhm at 50 A, it offers efficient switching. The input capacitance (Ciss) is a maximum of 7209 pF at 800 V. This through-hole component is packaged in a TO-247-3 (TO-247AB) for robust thermal management, operating at junction temperatures up to 175°C (TJ). The GA50JT12-247 is suitable for use in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A |
| FET Feature | - |
| Power Dissipation (Max) | 583W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247AB |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7209 pF @ 800 V |
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