GA50JT06-258
TRANS SJT 600V 100A TO258Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
600 V 100A (Tc) 769W (Tc) Through Hole TO-258
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-258-3, TO-258AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A |
| FET Feature | - |
| Power Dissipation (Max) | 769W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-258 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 600 V |
Request a Quote
Clients Also Buy
G3F320MT12J-TR
1200V 320M TO-263-7 G3F SIC MOSF
GA50JT12-263
TRANSISTOR 1200V 100A TO263-7
G2R120MT33J
SIC MOSFET N-CH TO263-7
