GA20SICP12-247
TRANS SJT 1200V 45A TO247ABManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor GA20SICP12-247 is a 1200V Silicon Carbide Junction Transistor (SiC JT) designed for demanding power applications. This through-hole component, packaged in a TO-247AB, offers a continuous drain current capability of 45A at 25°C (Tc) and a maximum power dissipation of 282W (Tc). The low on-resistance of 50mOhm at 20A is a key characteristic for efficient power conversion. With a junction temperature range of -55°C to 175°C, it is suitable for high-temperature environments. The input capacitance (Ciss) is specified at 3091 pF at 800V. This SiC JT is utilized in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 20A |
| FET Feature | - |
| Power Dissipation (Max) | 282W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247AB |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3091 pF @ 800 V |
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