GA20JT12-263
TRANS SJT 1200V 45A D2PAKManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor's GA20JT12-263 is a 1200V, 45A Silicon Carbide Junction Transistor (SJT) in a TO-263-8 (D2PAK) surface mount package. This device offers a low on-resistance of 60mOhm at 20A and a high continuous drain current capability of 45A (Tc). With a maximum power dissipation of 282W (Tc) and an operating junction temperature of 175°C, it is well-suited for demanding applications. The input capacitance (Ciss) is 3091 pF at 800V. This component is utilized in power conversion systems within the electric vehicle, industrial power supply, and renewable energy sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 20A |
| FET Feature | - |
| Power Dissipation (Max) | 282W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3091 pF @ 800 V |
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