GA20JT12-247
TRANS SJT 1200V 20A TO247ABManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor GA20JT12-247 is a 1200V, 20A Silicon Carbide Junction Transistor (SJT) housed in a TO-247AB package. This through-hole component offers a maximum continuous drain current of 20A at 25°C and a maximum power dissipation of 282W at the case temperature. The device features a low on-resistance (Rds On) of 70mOhm at 20A, contributing to efficient power conversion. With an operating junction temperature of 175°C, this SJT is suitable for demanding applications in industries such as electric vehicle charging, industrial motor drives, and high-voltage DC-DC converters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 20A |
| FET Feature | - |
| Power Dissipation (Max) | 282W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247AB |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
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