GA16JT17-247
TRANS SJT 1700V 16A TO247ABManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The GeneSiC Semiconductor GA16JT17-247 is a 1700V Silicon Carbide (SiC) Junction Transistor designed for high-power applications. This component features a continuous drain current (Id) of 16A at 90°C case temperature and a maximum power dissipation of 282W. The Rds(On) is specified at 110mOhm at 16A. It utilizes SiC technology for enhanced performance characteristics. The device is packaged in a through-hole TO-247-3 package, supplied in tubes. This component is suitable for use in power factor correction, electric vehicle charging, and industrial motor drive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) (90°C) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 16A |
| FET Feature | - |
| Power Dissipation (Max) | 282W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247AB |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1700 V |
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