GA10JT12-263
TRANS SJT 1200V 25AManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor GA10JT12-263 is a 1200V Silicon Carbide Junction Transistor. This surface mount device offers a continuous drain current of 25A (Tc) at 25°C and a maximum power dissipation of 170W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 1200V and a typical Rds(On) of 120mOhm at 10A. Input capacitance (Ciss) is specified at 1403 pF at 800V. The operating junction temperature range is up to 175°C. This component is utilized in demanding applications across industrial automation, electric vehicle charging, and renewable energy systems. It is supplied in tube packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 10A |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1403 pF @ 800 V |
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