GA10JT12-247
TRANS SJT 1200V 10A TO247ABManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor GA10JT12-247 is a 1200V, 10A Silicon Carbide Junction Transistor. This through-hole component, packaged in a TO-247AB (TO-247-3) configuration, offers a continuous drain current of 10A and a maximum power dissipation of 170W at 25°C (Tc). The GA10JT12-247 features a low on-resistance of 140mOhm at 10A. Operating at an ambient temperature of up to 175°C (TJ), this device is suitable for demanding applications in power supply, industrial motor control, and electric vehicle charging systems. The SiC technology enables superior performance characteristics compared to traditional silicon-based devices in high-voltage and high-frequency power conversion.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 10A |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247AB |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
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