GA100JT17-227
TRANS SJT 1700V 160A SOT227Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor GA100JT17-227. This Silicon Carbide (SiC) Junction Transistor (SJT) is rated for 1700V with a continuous drain current of 160A at 25°C (Tc). The component offers a low on-resistance of 10mOhm at 100A. With a maximum power dissipation of 535W (Tc), it is designed for chassis mounting in the SOT-227-4, miniBLOC package. Key parameters include a Ciss of 14400 pF at 800V and an operating temperature range of -55°C to 175°C (TJ). This device is suitable for high-power applications in industries such as electric vehicle charging, industrial motor drives, and power grid infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 100A |
| FET Feature | - |
| Power Dissipation (Max) | 535W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 800 V |
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