GA100JT12-227
TRANS SJT 1200V 160A SOT227Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor's GA100JT12-227 is a 1200V Silicon Carbide Junction Transistor (SJT) packaged in a SOT-227 (miniBLOC) chassis mount configuration. This component offers a continuous drain current of 160A (Tc) and a maximum power dissipation of 535W (Tc). Key electrical specifications include a drain-to-source voltage (Vdss) of 1200V and a low on-resistance (Rds On) of 10mOhm at 100A. Input capacitance (Ciss) is specified at 14400 pF @ 800 V. The operating junction temperature range is -55°C to 175°C. This device is suitable for high-power industrial applications, including electric vehicle charging, power factor correction, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 100A |
| FET Feature | - |
| Power Dissipation (Max) | 535W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 800 V |
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