GA08JT17-247
TRANS SJT 1700V 8A TO247ABManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor GA08JT17-247 is a Silicon Carbide Junction Transistor with a 1700V drain-to-source voltage and a continuous drain current of 8A at 90°C case temperature. This through-hole device features a TO-247AB package, offering a maximum power dissipation of 48W at 90°C case temperature. The Rds On is specified at 250mOhm at 8A. The operating junction temperature range is 175°C. This component is suitable for applications in high-voltage power conversion, electric vehicle charging, and industrial motor control.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) (90°C) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 8A |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247AB |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1700 V |
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