GA06JT12-247
TRANS SJT 1200V 6A TO247ABManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor GA06JT12-247 is a 1200V Silicon Carbide (SiC) Junction Transistor designed for high-power switching applications. This through-hole component, housed in a TO-247AB package, offers a continuous drain current of 6A at a case temperature of 90°C. The device features a maximum on-resistance (Rds On) of 220mOhm at 6A, contributing to efficient power conversion. Operating at junction temperatures up to 175°C, this transistor is suitable for demanding industries such as electric vehicle charging, industrial motor drives, and power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) (90°C) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 6A |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247AB |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
Request a Quote
Clients Also Buy
GA10SICP12-263
TRANS SJT 1200V 25A D2PAK
G3R350MT12D
SIC MOSFET N-CH 11A TO247-3
G3F320MT12J-TR
1200V 320M TO-263-7 G3F SIC MOSF
