GA05JT12-263
TRANS SJT 1200V 15A D2PAKManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The GeneSiC Semiconductor GA05JT12-263 is a 1200V, 15A Silicon Carbide Junction Transistor (SJT) in a TO-263-7 (D2PAK) surface mount package. This device offers a maximum continuous drain current of 15A at 25°C (Tc) and a maximum power dissipation of 106W (Tc). Engineered for high-voltage and high-power applications, it operates at junction temperatures up to 175°C. This component is suitable for demanding power conversion systems within the electric vehicle, industrial motor drive, and renewable energy sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 106W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
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